INVESTIGATION OF ZINC INCORPORATION IN GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION

被引：22
作者：
CHANG, CY
CHEN, LP
WU, CH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.338030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1860 / 1863
页数：4
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[1]   CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE [J].
CHANG, CY ;
SU, YK ;
LEE, MK ;
CHEN, LG ;
HOUNG, MP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :24-29
[2]   INCORPORATION OF AL AND GA IN ALGAAS GROWN BY LOW-PRESSURE TRIETHYL GALLIUM METALORGANIC VAPOR-PHASE EPITAXY [J].
CHANG, CY ;
CHEN, LP ;
NEE, CY .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :609-611
[3]   ZINC DOPING OF MOCVD GAAS [J].
GLEW, RW .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :44-47
[4]   GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD [J].
GLEW, RW ;
FROST, MS .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :450-452
[5]   REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS [J].
KOBAYASHI, N ;
MAKIMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10) :L824-L826
[6]   REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES [J].
KUECH, TF ;
POTEMSKI, R .
APPLIED PHYSICS LETTERS, 1985, 47 (08) :821-823
[7]   MODULATION DOPED GAAS-GA1-XALXAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOVPE [J].
MALUENDA, J ;
FRIJLINK, PM .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L127-L129
[8]   REDUCED PRESSURE MOVPE GROWTH AND CHARACTERIZATION OF GAAS/GAALAS HETEROSTRUCTURES USING A TRIETHYLGALLIUM SOURCE [J].
NORRIS, P ;
BLACK, J ;
ZEMON, S ;
LAMBERT, G .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :437-444
[9]   A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].
PUTZ, N ;
HEINECKE, H ;
HEYEN, M ;
BALK, P ;
WEYERS, M ;
LUTH, H .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :292-300
[10]   EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L795-L797
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