3-DIMENSIONAL VERSUS 2-DIMENSIONAL ELECTRON-GAS INJECTION IN RESONANT-TUNNELING

被引：2

作者：

FIGIELSKI, T ^{[1
]}

WOSINSKI, T ^{[1
]}

MAKOSA, A ^{[1
]}

KANIEWSKA, M ^{[1
]}

REGINSKI, K ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND

来源：

ACTA PHYSICA POLONICA A | 1995年 / 88卷 / 04期

关键词：

D O I：

10.12693/APhysPolA.88.707

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A small ''precursor'' of resonance is observed before the main resonance peak in the current-voltage characteristic of double-barrier resonant-tunnelling devices. The competition between the precursor and main-peak current is examined within the temperature range 4.2-400 K. The precursor is interpreted as 3DEG contribution to the resonant tunnelling dominated by a 2DEG injection from a triangular well formed under bias in the emitter spacer layer.

引用

收藏

页码：707 / 710

页数：4

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