Effect of excimer laser annealing through oxide

被引：0

作者：

Sung, HJ ^{[1
]}

Lu, IM ^{[1
]}

Chang, SC ^{[1
]}

机构：

[1] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu 310, Taiwan

来源：

ASID'99: PROCEEDINGS OF THE 5TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY | 1999年

关键词：

interference; laser activation; excimer laser;

D O I：

10.1109/ASID.1999.762723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the effects of the crystallization of a-Si film with a capping oxide by 308nm XeCl excimer laser. It is related to the process of impurity activation after ion doping and the uniformity improvement of excimer laser crystallization through oxide. The 50nm PECVD a-Si film was deposited on PECVD oxide with a thickness of 300nm. Then the sample was heated to reduce the hydrogen content in the a-Si thin film. A PECVD oxide was deposited on the dehydrogenated a-Si layer. The thickness of capping oxide ranges from 100nm to 400nm. When a capping oxide was used as a hard mask for ion doping or suppressing the deviation of laser energy, the thickness of capping oxide plays an important role in the laser activation or crystallization process. In this study we discuss the effect of the thickness of capping oxide on the laser crystallization or activation process. Good correlation between the interference effect (capping oxide thickness) and laser crystallized film quality was observed.

引用

页码：101 / 104

页数：4