MATERIALS OPTIONS FOR FIELD-EFFECT TRANSISTORS

被引:15
作者
WIEDER, HH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词
D O I
10.1116/1.570957
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:827 / 837
页数:11
相关论文
共 109 条
[21]   SURFACE VACANCIES IN INP AND GAAIAS [J].
DAW, MS ;
SMITH, DL .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692
[22]   NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J].
DILORENZO, JV ;
NIEHAUS, WC ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :951-954
[23]   HIGH-RESISTIVITY LAYERS IN N-INP PRODUCED BY FE ION-IMPLANTATION [J].
DONNELLY, JP ;
HURWITZ, CE .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :475-478
[24]   DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].
DRANGEID, KE ;
SOMMERHA.R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :82-&
[25]   PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J].
EDEN, RC ;
WELCH, BM ;
ZUCCA, R .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :419-426
[26]   SPECIFIC CONTACT RESISTANCE OF OHMIC CONTACTS TO GALLIUM-ARSENIDE [J].
EDWARDS, WD ;
TORRENS, AB ;
HARTMAN, WA .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :387-&
[27]   REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].
EVANS, CA ;
DELINE, VR ;
SIGMON, TW ;
LIDOW, A .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293
[28]   STABILIZATION OF SURFACES OF III .5. COMPOUND CRYSTALS BY MOLECULAR-BEAMS [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (07) :L87-&
[29]   IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].
FAVENNEC, PN ;
HARIDON, HL .
APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701
[30]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52