MATERIALS OPTIONS FOR FIELD-EFFECT TRANSISTORS

被引:15
作者
WIEDER, HH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词
D O I
10.1116/1.570957
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:827 / 837
页数:11
相关论文
共 109 条
[1]   EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].
ADAMS, AR ;
TATHAM, HL ;
HAYES, JR ;
ELSABBAHY, AN .
ELECTRONICS LETTERS, 1980, 16 (14) :560-562
[2]   DEVELOPMENT OF OHMIC CONTACTS FOR GAAS DEVICES USING EPITAXIAL GE FILMS [J].
ANDERSON, WT ;
CHRISTOU, A ;
DAVEY, JE .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :430-435
[3]   PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].
ANTYPAS, GA .
APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65
[4]  
ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P55
[5]   REDISTRIBUTION OF CHROMIUM IN SEMI-INSULATING GAAS-CR DURING LASER ANNEALING [J].
BADAWI, MH ;
SEALY, BJ ;
CLEGG, JB .
ELECTRONICS LETTERS, 1980, 16 (14) :554-556
[6]   OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J].
BARNES, PA ;
LEAMY, HJ ;
POATE, JM ;
FERRIS, SD ;
WILLIAMS, JS ;
CELLER, GK .
APPLIED PHYSICS LETTERS, 1978, 33 (11) :965-967
[7]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[8]   METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].
BRASLAU, N ;
GUNN, JB ;
STAPLES, JL .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+
[9]   LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].
CAMPISANO, SU ;
CATALANO, I ;
FOTI, G ;
RIMINI, E ;
EISEN, F ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :485-488
[10]   (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1244-1248