A NEW TECHNIQUE OF BORON DOPING IN SI-H FILMS

被引：12
作者：
HAMASAKI, T
KURATA, H
HIROSE, M
OSAKA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 02期
关键词：
D O I：
10.1143/JJAP.20.L84
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L84 / L86
页数：3
相关论文
共 7 条
[1]  
Azaroff L.V., 1968, ELEMENTS XRAY CRYSTA, P552
[2]   AMORPHOUS SILICON SOLAR-CELL [J].
CARLSON, DE ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673
[3]   LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J].
HAMASAKI, T ;
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1980, 37 (12) :1084-1086
[4]  
MISHIMA Y, 1980, J APPL PHYS, V51, P159
[5]   DOPED AMORPHOUS-SEMICONDUCTORS [J].
SPEAR, WE .
ADVANCES IN PHYSICS, 1977, 26 (06) :811-845
[6]   NOVEL EFFECTS OF MAGNETIC-FIELD ON THE SILANE GLOW-DISCHARGE [J].
TANIGUCHI, M ;
HIROSE, M ;
HAMASAKI, T ;
OSAKA, Y .
APPLIED PHYSICS LETTERS, 1980, 37 (09) :787-788
[7]   CHARACTERIZATION OF AMORPHOUS SEMICONDUCTING SILICON BORON ALLOYS PREPARED BY PLASMA DECOMPOSITION [J].
TSAI, CC .
PHYSICAL REVIEW B, 1979, 19 (04) :2041-2055
1