OPTICAL-ABSORPTION OF CU IMPLANTED SILICA

被引:43
作者
MAGRUDER, RH
WEEKS, RA
ZUHR, RA
WHICHARD, G
机构
[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN
[2] VANDERBILT UNIV,DEPT MAT SCI & ENGN,NASHVILLE,TN 37240
基金
美国国家科学基金会;
关键词
D O I
10.1016/0022-3093(91)90079-L
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The extinction coefficient (EC) per ion was measured over the spectral range from 1.8 to 6.2 eV for a series of Cu ion implanted silica substrates. The substrates were implanted with nominal doses ranging from 0.3 to 12.0 X 10(16) ions/cm2 at substrate temperatures of 100, 296 and 673 K. The EC was observed to increase for both increasing dose and substrate temperature. The absorption in the spectral region < 5.0 eV is attributed to the formation of spherical and oblate spheroidal colloids. At spectral energies > 5.0 eV, the absorption is attributed to radiation damage effects.
引用
收藏
页码:46 / 53
页数:8
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