ION-IMPLANTED PARA-NORMAL-JUNCTION CAPACITORS FOR GAAS DRAMS

The generation-limited storage time of ion-implanted GaAs p-n junction capacitors is reported. Deep n-type potential wells were formed in a lightly p-doped epitaxial layer with 150-keV Si ++ doses of 5 x 10 13 cm-2 and 1 x 10 14 cm-2. Mg + doses of 5 x 10 14 cm-2 were implanted through a thin SiON cap at 40 and 60 keV to form shallow p +-regions within the n-wells. Storage times obtained from capacitance transient measurements of the p-n-p structures indicate the possibility of planar ion-implanted GaAs dynamic memory cells at room temperature. © 1990 IEEE