SPUTTERING ION-SOURCE WITH SIMULTANEOUS USE OF MICROWAVE AND PENNING-IONIZATION-GAUGE DISCHARGE

被引:4
作者
YOSHIDA, Y [1 ]
OHNISHI, T [1 ]
HIROFUJI, Y [1 ]
IKEDA, T [1 ]
机构
[1] MATSUSHITA ELECT IND CO LTD,MORIGUCHI,OSAKA 570,JAPAN
关键词
D O I
10.1063/1.1141929
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Characteristics of Penning-ionization-gauge-type compact microwave metal-ion source are described. This ion source can operate with two different discharge modes: the positive-resistance region mode and the negative-resistance region mode. In the positive-resistance region, a normalized emittance of a Ta+-ion beam is 1.8×10-7 m rad, the plasma density is 4×1012 cm-3, and the electron temperature is about 6 eV. In the negative-resistance region, the emittance is 2.7×10-7 m rad. This ion source is suitable for operation in the positive-resistance region where the microwave discharge is dominant.
引用
收藏
页码:598 / 600
页数:3
相关论文
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