HIGH-PERFORMANCE ALGAINP VISIBLE LIGHT-EMITTING-DIODES

被引：161

作者：

KUO, CP ^{[1
]}

FLETCHER, RM ^{[1
]}

OSENTOWSKI, TD ^{[1
]}

LARDIZABAL, MC ^{[1
]}

CRAFORD, MG ^{[1
]}

ROBBINS, VM ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 27期

关键词：

D O I：

10.1063/1.103736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of surface-emitting visible AlGaInP light-emitting diodes (LEDs) is described. The devices have external quantum efficiencies greater than 2% and luminous efficiencies of 20 lm/A in the yellow (590 nm) spectral region. This performance is roughly ten times better than existing yellow LEDs and is comparable to the highest performance red AlGaAs LEDs currently available. The devices also perform favorably compared to existing devices in the orange and green spectral regions. Low-pressure organometallic vapor epitaxy (OMVPE) is used to grow the epitaxial layers. The devices consist of a double heterostructure with an AlGaInP active grown on a GaAs substrate.

引用

页码：2937 / 2939

页数：3

共 13 条

[1] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF (ALXGA1-X)0.5IN0.5P AND ITS HETEROSTRUCTURES [J].