THE DIFFUSIVITY OF CARBON IN SILICON

被引：80

作者：

NEWMAN, RC

WAKEFIELD, J

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1961年 / 19卷 / 3-4期

关键词：

D O I：

10.1016/0022-3697(61)90032-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：230 / 234

页数：5

共 11 条

[1]

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[3] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM [J].

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NEWMAN, RC ;

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JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) :707-714

[4]

Calvin M., 1949, ISOTOPIC CARBON

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DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474

[6] THE IDENTIFICATION OF PRECIPITATE PARTICLES IN SINGLE CRYSTALS OF SILICON BY REFLECTION ELECTRON DIFFRACTION [J].

NEWMAN, RC .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (492) :993-996

[7]

NEWMAN RC, 1958, P INT C SOLID STATE, P318

[8] VOLATILE IMPURITIES IN SILICON AND GERMANIUM [J].

PAPAZIAN, HA ;

WOLSKY, SP .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) :1561-1561

[9]

REISS H, 1959, SEMICONDUCTORS, P244

[10] SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J].

SCACE, RI ;

SLACK, GA .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) :1551-1555

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