SILICON TRANSPORT DURING OXIDATION

被引：11

作者：

MURRELL, MP

SOFIELD, CJ

SUGDEN, S

机构：

[1] Harwell Laboratory, AEA Technology, Oxfordshire, ORA, 0X11, Didcot

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 06期

关键词：

D O I：

10.1080/13642819108205560

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the transport of silicon across the silicon/silicon dioxide boundary, in the light of recently proposed reactive layer models of silicon oxidation. Using sequential O-18(2)-enriched and natural oxygen gas oxidations at 600, 850 and 950-degrees-C we have placed an upper limit of approximately 0.2 of a monolayer on the distance silicon diffuses into the oxide during oxidation. Thus the formation of new oxide occurs essentially at the silicon/silica interface.

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页码：1277 / 1287

页数：11

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