ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE

被引：30

作者：

IPRI, AC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.1661592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2770 / +

页数：1

共 13 条

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[9] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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