HIGH MOBILITIES IN ALXGA1-XAS-GAAS HETEROJUNCTIONS

被引：70

作者：

WITKOWSKI, LC ^{[1
]}

DRUMMOND, TJ ^{[1
]}

STANCHAK, CM ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 11期

关键词：

D O I：

10.1063/1.91754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1033 / 1035

页数：3

共 10 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[2] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330

[3] SEMICONDUCTOR SUPERFINE STRUCTURES BY COMPUTER-CONTROLLED MOLECULAR-BEAM EPITAXY [J].

ESAKI, L ;

CHANG, LL .

THIN SOLID FILMS, 1976, 36 (02) :285-298

[4] RAMAN-SCATTERING IN SUPER-LATTICES - ANISOTROPY OF POLAR PHONONS [J].

MERLIN, R ;

COLVARD, C ;

KLEIN, MV ;

MORKOC, H ;

CHO, AY ;

GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :43-45

[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[6] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

MORI, S ;

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[7]

MORKOC H, UNPUBLISHED

[8]

RUSCH JG, 1970, J APPLIED PHYSICS, V41, P3843

[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

STORMER, HL ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W ;

STURGE, MD .

SOLID STATE COMMUNICATIONS, 1979, 29 (10) :705-709

[10]

TSUI DC, 1979, APPL PHYS LETT, V35, P101

← 1 →