UNDERSTANDING EPITAXIAL SI CVD FILM GROWTH FROM SILICON HYDRIDE MOLECULES

被引：0
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作者：
GATES, SM [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1991年 / 201卷
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：79 / PHYS
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