CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON

被引：49
作者：
ARNOLD, E
LADELL, J
ABOWITZ, G
机构：
来源：
APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 12期
关键词：
D O I：
10.1063/1.1652496
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：413 / +
页数：1
相关论文
共 7 条
[1]   SYMMETRY OF INTERFACE CHARGE DISTRIBUTION IN THERMALLY OXIDIZED SILICON [J].
ABOWITZ, G ;
ARNOLD, E ;
LADELL, J .
PHYSICAL REVIEW LETTERS, 1967, 18 (14) :543-+
[2]  
BARRETT CS, 1952, STRUCTURE METALS, P26
[3]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[4]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[5]   SURFACE STATES IN SILICON FROM CHARGES IN OXIDE COATING [J].
GOETZBERGER, A ;
HEINE, V ;
NICOLLIAN, EH .
APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+
[6]   STABILIZATION OF MOS DEVICES [J].
HOFSTEIN, SR .
SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+
[7]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
1