TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES

被引：96

作者：

SCHULZ, M ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

关键词：

D O I：

10.1063/1.89774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 625

页数：4

共 7 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

[2] SPECTRUM AND NATURE OF SURFACE STATES [J].

FLIETNER, H .

[3]

Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[4]

JOHNSON NM, UNPUBLISHED

LANG, DV .

LEFEVRE, H ;

SCHULZ, M .

APPLIED PHYSICS, 1977, 12 (01) :45-53

[7]

SCHULZ M, TO BE PUBLISHED