CHARACTERISTICS OF IN0.53GA0.47AS/INP DOUBLE AND SINGLE HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS GROWN BY LP-MOCVD

被引：7
作者：
WU, YH
SU, JS
HSU, WC
LIU, WC
LIN, W
机构：
[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN 70101,TAIWAN
[2] MINIST TRANSPORTAT & COMMUN,TELECOMMUN LAB,TAYUAN,TAIWAN
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 04期
关键词：
D O I：
10.1016/0038-1101(94)00176-G
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively, These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.
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收藏
页码：767 / 769
页数：3
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