SELF-LIMITING OXIDATION OF SI NANOWIRES

被引:153
作者
LIU, HI [1 ]
BIEGELSEN, DK [1 ]
JOHNSON, NM [1 ]
PONCE, FA [1 ]
PEASE, RFW [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,ELECTR MAT LAB,PALO ALTO,CA 94304
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词
D O I
10.1116/1.586661
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Achieving tolerances of the order of 1 nm for sub-10 nm structures is both challenging and necessary for controlled experiments on such structures. Here the use of a self-limiting oxidation reaction to yield silicon (Si) wires of less than 10 nm diam with a tolerance of +/- 1 nm over 0.5 mum. The final self-limiting diameters were found to be controlled by oxidation temperature. For 30 nm initial Si column diameters, the asymptotic diameters were found to be 11 and 6 nm for dry oxidation at 800 and 850-degrees-C, respectively. The mechanism of the self-limiting reaction is not yet fully understood but the tiny radius of curvature is obviously a factor. In addition, there appears to be an anomalous loss of Si; this may be due to sublimation of SiO.
引用
收藏
页码:2532 / 2537
页数:6
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