HIGH-POWER INGAAS/AIGAAS SINGLEMODE LASER-DIODES SUITABLE FOR PUMPING PR3+-DOPED FLUORIDE FIBER OPTIC AMPLIFIERS

被引：7
|
作者：
GIGNAC, WJ
MAJOR, JS
PLANO, WE
NAM, DW
WELCH, DF
SCIFRES, D
机构：
[1] Spectra Diode Laboratories, San Jose, CA 95134
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 13期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920778
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performance characteristics are presented for high-power, singlemode, strained-layer InGaAs/AlGaAs quantum well separate confinement laser diodes. A maximum output power of 460 m W continuous wave with single transverse mode behaviour to 245 m W is achieved in thc wavelength range 1020-1030 nm. These singlemode laser diodes have narrow far-field divergence, making them highly attractive as optical pumps for Pr3+-doped fluoride fibre optic amplifiers.
引用
收藏
页码：1232 / 1234
页数：3
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