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MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES
被引:15
作者
:
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
DENTAI, AG
[
1
]
JOYNER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
JOYNER, CH
[
1
]
TELL, B
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
TELL, B
[
1
]
ZYSKIND, JL
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
ZYSKIND, JL
[
1
]
SULHOFF, JW
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
SULHOFF, JW
[
1
]
FERGUSON, JF
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
FERGUSON, JF
[
1
]
CENTANNI, JC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
CENTANNI, JC
[
1
]
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
CHU, SNG
[
1
]
CHENG, CL
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,MURRAY HILL,NJ 07974
AT&T BELL LABS,MURRAY HILL,NJ 07974
CHENG, CL
[
1
]
机构
:
[1]
AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
:
ELECTRONICS LETTERS
|
1986年
/ 22卷
/ 22期
关键词
:
D O I
:
10.1049/el:19860813
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1186 / 1188
页数:3
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[1]
DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY
CHU, SNG
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引用数:
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h-index:
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CHU, SNG
NAKAHARA, S
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JOHNSTON, WD
论文数:
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引用数:
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JOHNSTON, WD
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(10)
: 3441
-
3447
[2]
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[3]
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[4]
VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS
TENG, SJJ
论文数:
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引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
TENG, SJJ
BALLINGALL, JM
论文数:
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引用数:
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MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
BALLINGALL, JM
ROSENBAUM, FJ
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0
引用数:
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h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
ROSENBAUM, FJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(18)
: 1217
-
1219
←
1
→
共 4 条
[1]
DEFECT STRUCTURE IN III-V-COMPOUND SEMICONDUCTORS - GENERATION AND EVOLUTION OF DEFECT STRUCTURES IN INGAAS AND INGAASP EPITAXIAL LAYER GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
CHU, SNG
NAKAHARA, S
论文数:
0
引用数:
0
h-index:
0
NAKAHARA, S
KARLICEK, RF
论文数:
0
引用数:
0
h-index:
0
KARLICEK, RF
STREGE, KE
论文数:
0
引用数:
0
h-index:
0
STREGE, KE
MITCHAM, D
论文数:
0
引用数:
0
h-index:
0
MITCHAM, D
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, WD
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(10)
: 3441
-
3447
[2]
CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
[3]
RAZEGHI M, 1986, 169TH EL CHEM SOC M
[4]
VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS
TENG, SJJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
TENG, SJJ
BALLINGALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
BALLINGALL, JM
ROSENBAUM, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166
ROSENBAUM, FJ
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(18)
: 1217
-
1219
←
1
→