KINETICS OF HYDROGEN DESORPTION ON A SI(111) SURFACE

被引：39

作者：

MORITA, Y ^{[1
]}

MIKI, K ^{[1
]}

TOKUMOTO, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

SURFACE SCIENCE | 1995年 / 325卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)00706-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An in situ observation of hydrogen (H) desorption on a Si(lll) surface was carried out by using high temperature scanning tunneling microscopy (STM). There appeared a disordered phase with no atomic images around 490 degrees C at which the surface monohydride started to desorb. When the sample temperature was maintained at a certain moment above 490 degrees C, the area of the disordered phase decreased with time and changed into a Si(111)-root 3 x root 3 R30 degrees structure. This behavior of the surface structure can be explained by the migration of SiH species on an unreconstructed Si(111)-1 x 1 surface at elevated temperature. Based on this behavior, we propose a model for the H desorption.

引用

页码：21 / 32

页数：12

共 34 条

[1]

BOLAND JJ, 1991, SURF SCI, V224, P1

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