INVESTIGATION OF THE HOLE RESONANT ENERGIES IN GAAS-ALGAAS DOUBLE-BARRIER

被引:0
作者
SEKKAL, N
ZITOUNI, K
KADRI, A
机构
[1] Computational Materials Science Laboratory, Physics Department, University of Sidi Bel Abbès
[2] MicroOptoElectronics Laboratory, Institute of Physics, University of Oran, Es-Senia
关键词
D O I
10.1006/spmi.1994.1157
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A rigorous calculation of the resonant energies corresponding to valence sub-band hole transmission maxima is presented for GaAs/AlGaAs double-barrier heterostructures, employing the k.p method, the envelope-function approximation, and transfer matrix techniques. Incident waves associated with both the two light-hole and two heavy-hole bands are treated explicitly.
引用
收藏
页码:391 / 397
页数:7
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