SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC

被引：349
作者：
IKEDA, M
MATSUNAMI, H
TANAKA, T
机构：
来源：
PHYSICAL REVIEW B | 1980年 / 22卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.22.2842
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：2842 / 2854
页数：13
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