Surface Energy Band and Electron Affinity of Highly Phosphorous-doped Epitaxial CVD Diamond

被引:7
作者
Kono, S. [1 ,2 ]
Mizuochi, K. [1 ]
Takyo, G. [1 ]
Plusnin, N. I. [1 ]
Aoyama, T. [1 ]
Goto, T. [1 ]
Abukawa, T. [1 ]
Namba, A. [3 ]
Nishibayashi, Y. [3 ]
Imai, T. [3 ]
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
[2] JST, CREST, Tokyo 1500011, Japan
[3] Sumitomo Elect Ind Ltd, Itami, Hyogo 6640016, Japan
关键词
Diamond; Ultraviolet photoelectron spectroscopy; Secondary electron spectroscopy; X-ray photoelectron spectroscopy; Photoemission electron micro-spectroscopy; Surface energy band diagram; Electron affinity;
D O I
10.1380/ejssnt.2007.33
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The surface energy band diagrams and the electron affinity of hydrogen-terminated and oxygen-terminated highly phosphorous-doped single crystal diamond (111) surfaces have been studied by ultraviolet photoelectron spectroscopy, secondary electron spectroscopy, X-ray photoelectron spectroscopy and photoemission electron microspectroscopy. A hydrogen-terminated boron-doped diamond (001) surface was used as a reference of surface energy band diagram. The electron affinity of the H-terminated heavily P-doped diamond was determined to be 0.2 +/- 0.15 eV, thus close to zero. The electron affinity of the O-terminated highly P-doped diamond was determined to be 0.0 +/- 0.15 eV, thus can be negative. However, the surface energy bands for the two highly P-doped samples were found to have large amounts (3 eV) of upward bending toward surface.
引用
收藏
页码:33 / 40
页数:8
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