0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ

被引：41

作者：

NGUYEN, LD ^{[1
]}

RADULESCU, DC ^{[1
]}

TASKER, PJ ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期

关键词：

D O I：

10.1109/55.748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：374 / 376

页数：3

共 12 条

[1]

Camnitz L. H., 1985, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3), P199

[2]

CAMNITZ LH, 1985, THESIS CORNELL U ITH

[3]

FOISY MC, UNPUB IEEE T ELECTRO

[4] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[5] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

KETTERSON, A ;

MOLONEY, M ;

MASSELINK, WT ;

PENG, CK ;

KLEM, J ;

FISCHER, R ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :628-630

[6]

MOLL N, 1988, 45TH ANN DEV RES C S

[7]

Nguyen L. D., 1987, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2), P60

[8] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS [J].