POLY I2L - HIGH-SPEED LINEAR-COMPATIBLE STRUCTURE

被引：15

作者：

DAVIES, RD ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1109/JSSC.1977.1050916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：367 / 375

页数：9

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BERGER, HH ;

WIEDMANN, SK .

[4]

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[5]

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[6] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

Cowher, M.E. ;

Sedgwick, T.O. .

[7]

Crippen R. E., 1976, 1976 IEEE International Solid-State Circuits Conference. (Digest of technical papers), P98

[8]

DAVIES RD, 1977, IEEE J SOLID STATE C, V12

[9]

den Brinker C. S., 1975, 1st European Solid State Circuits ConferenceESSCIRC (Extended abstracts only), P18

[10]

DUNCAN DM, 1971, Patent No. 3600651