GENERALIZED THERMIONIC-EMISSION THEORY OF CARRIER TRANSPORT THROUGH THIN BASE OF BIPOLAR-TRANSISTOR

被引：0
作者：
POPOVIC, RS [1 ]
机构：
[1] EI NIS FABRIKA POLUPROVODNIKA, YU-18001 NIS, YUGOSLAVIA
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1982年 / 129卷 / 03期
关键词：
Compendex;
D O I：
10.1049/ip-i-1.1982.0024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：111 / 115
页数：5
相关论文
共 13 条
[1]   ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES [J].
BARNOSKI, MK ;
LOPER, DD .
SOLID-STATE ELECTRONICS, 1973, 16 (04) :433-&
[2]  
KEMBLE EC, 1958, FUNDAMENTAL PRINCIPL, P109
[3]  
KIMURA K, 1981, UNPUB ADV BIPOLAR DE
[4]   FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].
MACFARLANE, GG ;
MCLEAN, TP ;
QUARRINGTON, JE ;
ROBERTS, V .
PHYSICAL REVIEW, 1958, 111 (05) :1245-1254
[5]   DETAILED ANALYSIS OF METAL-SEMICONDUCTOR CONTACT [J].
PELLEGRINI, B .
SOLID-STATE ELECTRONICS, 1974, 17 (03) :217-237
[6]   ANALYTICAL APPROXIMATIONS OF NON-DEGENERATE SCHOTTKY DIODE CURRENT-VOLTAGE CHARACTERISTICS [J].
POPOVIC, RS .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (01) :337-348
[7]   APPARENT NARROWING OF THE BANDGAP IN THE BASE REGION OF BIPOLAR-TRANSISTORS [J].
POPOVIC, RS .
SOLID-STATE ELECTRONICS, 1979, 22 (03) :348-349
[8]  
REY G, 1972, THEORIE APPROFONDIE, P46
[9]   EFFECTS OF IMAGE FORCE AND TUNNELING ON CURRENT TRANSPORT IN METAL-SEMICONDUCTOR (SCHOTTKY-BARRIER) CONTACTS [J].
RIDEOUT, VL ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :993-&
[10]   QUESTIONABILITY OF DRIFT-DIFFUSION TRANSPORT IN ANALYSIS OF SMALL SEMICONDUCTOR-DEVICES [J].
ROHR, P ;
LINDHOLM, FA ;
ALLEN, KR .
SOLID-STATE ELECTRONICS, 1974, 17 (07) :729-734
12