ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：9

作者：

NAKAMURA, K ^{[1
]}

KAMOSHID.M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,IC DIV,1753 SHIMONUMABE,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.1663045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4262 / 4267

页数：6

共 21 条

[1]

BIERHENKE H, 1972, 5 P INT MICR C MUN

[2] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J].

COPPEN, PJ ;

BAUER, LO ;

AUBUCHON, KG ;

MOYER, NE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :165-&

[3]

DILL HG, 1971, 2 P INT C ION IMPL S, P315

[4]

EDWARDS JR, 1973, IEEE T ELECTRON DEVI, VED20, P283

[5]

GROVE AS, 1967, PHYS TECHNOL S, P305

[6]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P282

[7] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HSWE, M ;

SHOPBELL, ML ;

MAI, CC ;

PALMER, RB .

SOLID-STATE ELECTRONICS, 1972, 15 (11) :1237-+

[8] THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS [J].

KAMOSHID.M .

APPLIED PHYSICS LETTERS, 1973, 22 (08) :404-405

[9] SURFACE DEPLETION REGION WIDTH DEPENDENCE OF THRESHOLD VOLTAGE SHIFT OF ION-IMPLANTED MOS-TRANSISTOR [J].

KAMOSHIDA, M ;

KUDOH, O .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :501-503

[10] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS [J].

KAMOSHIDA, M .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :621-626

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