ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM-ARSENIDE

被引：12
作者：
STEVENS, EH
YEE, SS
机构：
[1] UNIV IDAHO,DEPT ELECT ENGN,MOSCOW,ID 83843
[2] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98105
来源：
JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期
关键词：
D O I：
10.1063/1.1662249
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：715 / 722
页数：8
相关论文
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