DIAMOND GROWTH ON A (100)-TYPE STEP

被引：34

作者：

HARRIS, SJ

BELTON, DN

机构：

[1] Physical Chemistry Department, General Motors Research Laboratories, Warren, MI 48090-9055

来源：

THIN SOLID FILMS | 1992年 / 212卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90520-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent measurements with scanning tunneling microscopes and atomic force microscopes show that diamonds grown with the chemical vapor deposition process are covered with steps, kinks, defects, and reconstructions. In the present work we model growth at a step site with (100) character. The model is a modified version of a previous mechanism which has been highly successful in predicting growth rates under a wide range of experimental conditions. Thus, it could serve as a valuable practical tool for predicting diamond growth rates in systems which have not previously been studied experimentally.

引用

页码：193 / 200

页数：8

共 35 条

[21] THERMOCHEMISTRY ON THE HYDROGENATED DIAMOND(111) SURFACE [J].