SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS

被引：16

作者：

ANDERSON, WT

CHRISTOU, A

DAVEY, JE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2998 / 3000

页数：3

共 13 条

[1]

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[9] NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS [J].

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[10] THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS [J].

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