COMPARISON OF CW LASER-ANNEALED AND ELECTRON-BEAM ANNEALED SI

被引：5

作者：

MIZUTA, M ^{[1
]}

SHENG, NH ^{[1
]}

MERZ, JL ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6437 / 6440

页数：4

共 12 条

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APPLIED PHYSICS LETTERS, 1980, 36 (08) :661-663

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[4] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[5] ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICON [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :154-156

[6] LUMINESCENCE INVESTIGATIONS OF LASER-ANNEALED SI [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :453-455

[7]

MIZUTA M, 1980, 22ND EL MAT C

[8] MODELING OF BEAM VOLTAGE EFFECTS IN ELECTRON-BEAM ANNEALING [J].

NEUKERMANS, A ;

SAPERSTEIN, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1847-1852

[9] ELECTRON-BEAM MEASUREMENTS OF MINORITY-CARRIER LIFETIME DISTRIBUTIONS IN ION-BEAM-DAMAGED SILICON [J].

POSSIN, GE ;

KIRKPATRICK, CG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4033-4041

[10]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

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