ANALYSIS OF THIN-FILM SILICON-ON-INSULATOR STRUCTURES FORMED BY LOW-ENERGY OXYGEN ION-IMPLANTATION

The characteristics of the formation and growth of buried oxide layers, formed by oxygen implantation into silicon at lower energies (50-140-keV O-16+), have been studied using secondary-ion mass spectrometry. Some results have been checked and compared with the results obtained by Rutherford backscattering and cross-sectional transmission electron microscopy. The critical doses, required to form a continuous buried stoichiometric oxide layer during implantation (PHI-c(I)) and after annealing (PHI-c(A)) have been estimated from experimental results. The thicknesses of the silicon overlayer (T(Si)A) and buried silicon dioxide layer (T(SiO2)A) for the annealed wafers have also been estimated. A set of semi-empirical formulas for PHI-c(I), PHI-c(A), T(Si)A, and T(SiO2)A has been introduced. These formulas can be used to quickly calculate the critical doses and the layer thickness values.