STRUCTURE OF SILICON-CARBIDE PRECIPITATES IN OXYGEN-IMPLANTED AND ANNEALED SILICON-ON-INSULATOR MATERIAL

被引：10
|
作者：
KRAUSE, SJ [1 ]
JUNG, CO [1 ]
WILSON, SR [1 ]
机构：
[1] MOTOROLA INC,SEMICOND PROD SECTOR,CTR BIPOLAR TECHNOL,MESA,AZ 85202
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期
关键词：
D O I：
10.1063/1.100568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：63 / 65
页数：3
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