DUCTILE ALUMINUM-BASE AMORPHOUS-ALLOYS WITH 2 SEPARATE PHASES

被引:147
作者
INOUE, A
YAMAMOTO, M
KIMURA, HM
MASUMOTO, T
机构
[1] Tohoku Univ, Sendai, Jpn, Tohoku Univ, Sendai, Jpn
关键词
ALUMINUM METALLOGRAPHY - Microstructures - CRYSTALLIZATION - ELECTRIC CONDUCTIVITY;
D O I
10.1007/BF01728983
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The specimens used in the present work were Al-Si-X and Al-Ge-X (X equals titanium, zirconium, vanadium, niobium, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel or copper) ternary alloys ranging from 5 to 30 at % Si, 15 to 40 at % Ge and 5 to 30 at % X. This letter reports the formation range, structure, strength, thermal stability and electrical resistivity of the Al-Si-X and Al-Ge-X amorphous alloys with separate phases.
引用
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页码:194 / 196
页数:3
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