KINETICS OF GAAS PLASMA ANODIZATION

被引：17

作者：

FRIEDEL, P

GOURRIER, S

DIMITRIOU, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 09期

关键词：

D O I：

10.1149/1.2127751

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1857 / 1861

页数：5

共 18 条

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[2]

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[3]

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[5] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES [J].

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SHENG, TT ;

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COLEMAN, JJ .

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[7]

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[8] SINGLE CARRIER STEADY-STATE THEORY FOR FORMATION OF ANODIC FILMS UNDER CONDITIONS OF HIGH SPACE-CHARGE IN VERY LARGE ELECTRIC-FIELDS [J].

FROMHOLD, AT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :538-549

[9] OXIDATION OF GAAS IN AN OXYGEN MULTIPOLE PLASMA [J].

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[10]

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