EFFECTS OF THE GROWTH-CONDITIONS ON DEEP LEVEL CONCENTRATION IN MOCVD GAAS

被引：37

作者：

WATANABE, MO ^{[1
]}

TANAKA, A ^{[1
]}

NAKANISI, T ^{[1
]}

ZOHTA, Y ^{[1
]}

机构：

[1] TOSHIBA CORP,TOSHIBA ELECTR EQUIP DIV,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期

关键词：

D O I：

10.1143/JJAP.20.L429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L429 / L432

页数：4

共 15 条

[1] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].

BHATTACHARYA, PK ;

KU, JW ;

OWEN, SJT ;

AEBI, V ;

COOPER, CB ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[3] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :181-186

[4] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468

[5] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS [J].

GLOVER, GH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :138-&

[6] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].

HASEGAWA, F ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1975, 11 (14) :286-288

[7] ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER [J].

HUANG, CI ;

LI, SS .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1481-1486

[8] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

HUBER, AM ;

LINH, NT ;

VALLADON, M ;

DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[9] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

← 1 2 →