MOLECULAR-BEAM EPITAXY OF SILICON - EFFECTS OF HEAVY SB DOPING

被引：26

作者：

KONIG, U

KASPER, E

HERZOG, HJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90185-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：151 / 158

页数：8

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[7] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

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FREYER J, UNPUBLISHED

[9] EFFECT OF OXYGEN ON ELECTRICAL-PROPERTIES OF SILICON [J].

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