ION MICROBEAM PROBING OF SENSE AMPLIFIERS TO ANALYZE SINGLE EVENT UPSETS IN A CMOS DRAM

被引:14
作者
GEPPERT, LM
BAPST, U
HEIDEL, DF
JENKINS, KA
机构
[1] Thomas J. Watson Research Center, IBM Research Division, Yorktown Heights, NY
[2] Zurich Research Laboratory, IBM Research Division, 8803, Ruesch-, likon
关键词
D O I
10.1109/4.68127
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By irradiating individual nodes of a CMOS DRAM composed of p-channel cells with a collimated microbeam of alpha particles, the relative sensitivity of circuit elements to single event upsets (SEU's) has been measured. The results show that alpha-particle hits on sensitive nodes within the sense amplifiers dominate the SEU rate. This domination is due to the presence in the sense amps of n-channel devices which can collect charge from the entire ion track. In contrast, the memory cells and bit lines contain only p+ nodes in an n-well, which shields them from charge generated in the substrate.
引用
收藏
页码:132 / 134
页数:3
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