RECOMBINATION AND TRAPPING OF CARRIERS IN GERMANIUM

被引：31

作者：

FAN, HY

NAVON, D

GEBBIE, H

机构：

来源：

PHYSICA | 1954年 / 20卷 / 10期

关键词：

D O I：

10.1016/S0031-8914(54)80198-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：855 / 872

页数：18

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[1] DISLOCATIONS AND RECOMBINATION OF CARRIERS IN GERMANIUM
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[2] TRAPPING OF INJECTED CARRIERS AT SURFACE OF GERMANIUM
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[3] TEMPERATURE DEPENDENCE OF RECOMBINATION + TRAPPING IN GERMANIUM
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[8] LOW-TEMPERATURE RECOMBINATION AND TRAPPING IN GERMANIUM
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[9] CARRIER RECOMBINATION AND TRAPPING PROCESSES IN IRRADIATED GERMANIUM
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[10] RECOMBINATION OF CHARGE-CARRIERS AT DISLOCATIONS IN GERMANIUM
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