PREPARATION OF TRANSVERSE SECTIONS OF SILICON-WAFERS FOR TRANSMISSION ELECTRON-MICROSCOPY

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作者：
MALININ, AA
REZNIK, VY
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INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1988年 / 31卷 / 05期
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T [工业技术];
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08 ;
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页码：1238 / 1240
页数：3
相关论文
共 7 条
[1]  
GARULLI A, 1985, J MICROSC SPECT ELEC, V10, P135
[2]   CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY STUDY OF OBLIQUELY EVAPORATED SILICON-OXIDE THIN-FILMS [J].
GESZTI, O ;
GOSZTOLA, L ;
SEYFRIED, E .
THIN SOLID FILMS, 1986, 136 (02) :L35-L38
[3]  
KARBAN VI, 1982, P SEMICONDUCTOR MATE
[4]  
PANKOV J, 1965, ETCHING SEMICONDUCTO, P62
[5]  
PETTIT HR, 1971, 25TH P ANN M EMAG I, P290
[6]   ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS [J].
SHENG, TT ;
MARCUS, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :737-743
[7]   A NOVEL SAMPLE PREPARATION TECHNIQUE FOR CROSS-SECTIONAL TEM INVESTIGATION OF INTEGRATED-CIRCUITS [J].
VANHELLEMONT, J ;
BENDER, H ;
CLAEYS, C ;
VANLANDUYT, J ;
DECLERCK, G ;
AMELINCKX, S ;
VANOVERSTRAETEN, R .
ULTRAMICROSCOPY, 1983, 11 (04) :303-305
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