ROOM-TEMPERATURE FORMATION OF SI-NITRIDE FILMS BY LOW-ENERGY NITROGEN ION-IMPLANTATION INTO SILICON

被引：46
作者：
HEZEL, R
LIESKE, N
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 02期
关键词：
D O I：
10.1149/1.2123852
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：379 / 383
页数：5
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