ANALYTICAL MODELING OF DEPLETION-MODE MOSFET WITH SHORT-CHANNEL AND NARROW-CHANNEL EFFECTS

被引：8
作者：
BALLAY, N
BAYLAC, B
机构：
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 06期
关键词：
D O I：
10.1049/ip-i-1.1981.0054
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：225 / 238
页数：14
相关论文
共 15 条
[1]   DEPLETION-MODE MOSFET MODEL INCLUDING A FIELD-DEPENDENT SURFACE MOBILITY [J].
BACCARANI, G ;
LANDINI, F ;
RICCO, B .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (02) :62-66
[2]  
BAYLAC B, 1976, ESSCIRC C TOULOUSE
[3]  
FICHTNER W, 1981, IEEE T ED, V27
[4]   ELECTRON-MOBILITY IN SI-MOSFETS WITH AN ADDITIONAL IMPLANTED CHANNEL [J].
FISCHER, W ;
JACOBS, EP ;
EISELE, I ;
DORDA, G .
SOLID-STATE ELECTRONICS, 1979, 22 (03) :225-228
[5]   MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGFET [J].
HUANG, JST ;
TAYLOR, GW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :995-1001
[6]   THRESHOLD VOLTAGE OF NARROW CHANNEL FIELD-EFFECT TRANSISTORS [J].
KROELL, KE ;
ACKERMAN, GK .
SOLID-STATE ELECTRONICS, 1976, 19 (01) :77-81
[7]  
LIN HC, 1980, IEEE J SOLID-ST CIRC, V15, P894
[8]  
MERCKEL G, 1977, NATO ADV STUDY I SER, V21, P677
[9]  
OKA H, 1979, IEDM TECH DIG, P30
[10]   THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL [J].
OMURA, Y ;
OHWADA, K .
SOLID-STATE ELECTRONICS, 1981, 24 (04) :301-308
12