Radiation damage to silicon detectors

被引：13
|
作者：
Hall, G
机构：
[1] Blackett Laboratory, Imperial College, London
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 368卷 / 01期
关键词：
D O I：
10.1016/0168-9002(95)00886-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A summary of recent progress in understanding the fundamental causes of bulk damage in high resistivity silicon detectors is given. A model based on deep acceptor states in the material appears to explain most of the experimental results. Candidates for the traps have been tentatively identified as vacancy-oxygen complexes with the aid of numerical simulations. The concentration of oxygen and carbon in the silicon is important in influencing the concentration of deep traps and may allow the possibility of improving the hardness of detectors.
引用
收藏
页码：199 / 204
页数：6
相关论文
共 50 条
  • [1] Radiation damage in silicon detectors
    Lindström, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2): : 30 - 43
  • [2] RADIATION-DAMAGE IN SILICON DETECTORS
    BORCHI, E
    BRUZZI, M
    RIVISTA DEL NUOVO CIMENTO, 1994, 17 (11): : 1 - 63
  • [3] RADIATION-DAMAGE IN SILICON DETECTORS
    WUNSTORF, R
    FRETWURST, E
    GRIEGER, E
    HERDAN, H
    LINDSTROM, G
    ROLLWAGEN, M
    BOTTGER, R
    SCHOLERMANN, H
    ECFA STUDY WEEK ON INSTRUMENTATION TECHNOLOGY FOR HIGH-LUMINOSITY HADRON COLLIDERS, PROCEEDINGS VOLS 1-2, 1989, 89 : 321 - 323
  • [4] RADIATION-DAMAGE IN SILICON DETECTORS
    KRANER, HW
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03): : 615 - 618
  • [5] RADIATION DAMAGE IN SILICON STRIP DETECTORS.
    Dietl, H.
    Gooch, T.
    Kelsey, D.
    Klanner, R.
    Loeffler, A.
    Pepe, M.
    Wickens, F.
    Nuclear instruments and methods in physics research, 1986, A253 (03): : 460 - 466
  • [6] RADIATION-DAMAGE IN SILICON MICROSTRIP DETECTORS
    OHSUGI, T
    TAKETANI, A
    NODA, M
    CHIBA, Y
    ASAI, M
    KONDO, T
    SATO, T
    TAKASAKI, M
    TANAKA, KH
    KONDO, K
    HIRAYAMA, H
    YAMAMOTO, K
    TANAKA, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (1-2): : 105 - 111
  • [7] RADIATION DAMAGE IN SILICON MICROSTRIP DETECTORS.
    Ohsugi, T.
    Taketani, A.
    Noda, M.
    Chiba, Y.
    Asai, M.
    Kondo, T.
    Sato, T.
    Takasaki, M.
    Tanaka, K.H.
    Kondo, K.
    Hirayama, H.
    Yamamoto, K.
    Tanaka, H.
    1600, (A265): : 1 - 2
  • [8] RADIATION-DAMAGE IN SILICON STRIP DETECTORS
    DIETL, H
    GOOCH, T
    KELSEY, D
    KLANNER, R
    LOFFLER, A
    PEPE, M
    WICKENS, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 460 - 466
  • [9] Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors
    Altana, Carmen
    Calcagno, Lucia
    Ciampi, Caterina
    La Via, Francesco
    Lanzalone, Gaetano
    Muoio, Annamaria
    Pasquali, Gabriele
    Pellegrino, Domenico
    Puglia, Sebastiana
    Rapisarda, Giuseppe
    Tudisco, Salvatore
    SENSORS, 2023, 23 (14)
  • [10] TEMPERATURE EFFECTS ON RADIATION-DAMAGE TO SILICON DETECTORS
    BARBERIS, E
    BOISSEVAIN, JG
    CARTIGLIA, N
    ELLISON, JA
    FERGUSON, P
    FLEMING, JK
    HOLZSCHEITER, K
    JERGER, S
    JOYCE, D
    KAPUSTINSKY, JS
    LESLIE, J
    LIETZKE, C
    MATTHEWS, JAJ
    PALOUNEK, APT
    PITZL, D
    ROWE, WA
    SADROZINSKI, HFW
    SKINNER, D
    SOMMER, WF
    SONDHEIM, WE
    WIMPENNY, SJ
    ZIOCK, HJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2): : 373 - 380
12345