PHOTOLUMINESCENCE AND RAMAN STUDIES OF POROUS SILICON IN POLYMETHYL METHACRYLATE

被引：22

作者：

GUHA, S ^{[1
]}

HENDERSHOT, G ^{[1
]}

PEEBLES, D ^{[1
]}

STEINER, P ^{[1
]}

KOZLOWSKI, F ^{[1
]}

LANG, W ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLID STATE TECHNOL,W-8000 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of strong luminescence from porous Si grains containing Si nanocrystallites embedded in polymethyl methacrylate disks. In concentrated samples, forward and backscattered photoluminescence spectra were just as strong as in porous Si on Si wafers. This new result indicates that porous Si grains could be embedded in nonconducting polymers and would retain all its inherent characteristics as in porous Si layers on Si wafers.

引用

页码：613 / 615

页数：3

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