SHALLOW SB-DOPED SI SURFACE-LAYERS FORMED BY RECOIL IMPLANTATION

被引:1
作者
KWOK, HL [1 ]
WONG, SC [1 ]
机构
[1] CHINESE UNIV HONG KONG,DEPT ELECTR,SHATIN,HONG KONG
关键词
D O I
10.1007/BF01148801
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1073 / 1076
页数:4
相关论文
共 50 条
[31]   THE COMPOSITION OF SURFACE-LAYERS FORMED ON DISSOLUTION OF CDTE IN ACIDIC ETCHANTS [J].
TOMASHIK, VN ;
SAVA, AA ;
TOMASHIK, ZF ;
FOMIN, AV .
INORGANIC MATERIALS, 1994, 30 (01) :39-43
[32]   THE COMPOSITION OF SURFACE-LAYERS FORMED IN A LUBRICATED CAM TAPPET CONTACT [J].
WILLERMET, PA ;
PIEPRZAK, JM ;
DAILEY, DP ;
CARTER, RO ;
LINDSAY, NE ;
HAACK, LP ;
DEVRIES, JE .
JOURNAL OF TRIBOLOGY-TRANSACTIONS OF THE ASME, 1991, 113 (01) :38-47
[33]   Ultra-shallow P+/N junctions formed by recoil implantation [J].
Liu, HL ;
Gearhart, SS ;
Booske, JH ;
Wang, W .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) :1027-1029
[34]   Ultra-shallow P+/N junctions formed by recoil implantation [J].
Henley L. Liu ;
Steven S. Gearhart ;
John H. Booske ;
Wei Wang .
Journal of Electronic Materials, 1998, 27 :1027-1029
[35]   Thermoelectric properties of Sb-doped Mg2Si semiconductors [J].
Tani, Jun-Ichi ;
Kido, Hiroyasu .
INTERMETALLICS, 2007, 15 (09) :1202-1207
[36]   TUNNELING STUDY OF LOCALIZED STATES IN RESERVED REGION OF SB-DOPED SI [J].
SUZUKI, M ;
KAWATA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :291-292
[37]   Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing [J].
Klinger, D. ;
Auleytner, J. ;
Zymierska, D. ;
Nowicki, L. .
Journal of Alloys and Compounds, 2004, 362 (1-2) :282-286
[38]   Nanostructure of near-surface Si layers formed by implantation and pulsed laser annealing [J].
Klinger, D ;
Auleytner, J ;
Zymierska, D ;
Nowicki, L .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 362 (1-2) :282-286
[39]   Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices [J].
Shiihara, T. ;
Oki, S. ;
Sakai, S. ;
Ikawa, M. ;
Yamada, S. ;
Hamaya, K. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (10)
[40]   PHOTOELECTROCHEMICAL DETERMINATION OF BANDGAP ENERGY IN SURFACE-LAYERS FORMED ON SEMICONDUCTOR ELECTRODES [J].
MAKUTA, ID ;
POZNYAK, SK ;
KULAK, AI .
ELECTROCHIMICA ACTA, 1995, 40 (11) :1761-1767