HOPPING MODEL FOR ACTIVATED CHARGE TRANSPORT IN AMORPHOUS SILICON

被引：131

作者：

GRUNEWALD, M

THOMAS, P

机构：

[1] Fachbereich Physik Der Philipps-Universität, Marburg

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssb.2220940113

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A variable‐range hopping model is examined for transport in a band tail. For an exponential density of states the difference of the activation energies of conductivity and thermoelectric power, ΔE, is essentially determined by the steepness of the tail. ΔE varies slowly with tempera ture and depends little on the localization length α of the wave functions and on the magnitude of the density of states. From comparison of the results with experimental data it is suggested that this model applies to activated transport in n‐type amorphous silicon. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：125 / 133

页数：9

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