MICROWAVE AND MILLIMETER-WAVE QWITT DIODE OSCILLATORS

被引：17

作者：

KESAN, VP ^{[1
]}

MORTAZAWI, A ^{[1
]}

MILLER, DR ^{[1
]}

REDDY, VK ^{[1
]}

NEIKIRK, DP ^{[1
]}

ITOH, T ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 12期

关键词：

D O I：

10.1109/22.44105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1933 / 1941

页数：9

共 21 条

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[2]

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[3] FABRICATION OF 200-GHZ FMAX RESONANT-TUNNELING DIODES FOR INTEGRATED-CIRCUIT AND MICROWAVE APPLICATIONS [J].

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IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) :104-106

[4]

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[5]

Kesan V. P., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P62, DOI 10.1109/IEDM.1987.191349

[6] MICROWAVE FREQUENCY OPERATION OF QUANTUM-WELL INJECTION TRANSIT-TIME (QWITT) DIODE [J].

KESAN, VP ;

MORTAZAWI, A ;

MILLER, DR ;

ITOH, T ;

STREETMAN, BG ;

NEIKIRK, DP .

ELECTRONICS LETTERS, 1988, 24 (24) :1473-1474

[7] MONOLITHIC MILLIMETRE-WAVE OSCILLATOR USING A TRANSMISSION-LINE PERIODICALLY LOADED BY QWITT DIODES [J].

KESAN, VP ;

MORTAZAWI, A ;

NEIKIRK, DP ;

ITOH, T .

ELECTRONICS LETTERS, 1988, 24 (11) :666-667

[8] A NEW TRANSIT-TIME DEVICE USING QUANTUM-WELL INJECTION [J].

KESAN, VP ;

NEIKIRK, DP ;

STREETMAN, BG ;

BLAKEY, PA .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :129-131

[9] THE INFLUENCE OF TRANSIT-TIME EFFECTS ON THE OPTIMUM DESIGN AND MAXIMUM OSCILLATION FREQUENCY OF QUANTUM WELL OSCILLATORS [J].

KESAN, VP ;

NEIKIRK, DP ;

BLAKEY, PA ;

STREETMAN, BG ;

LINTON, TD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :405-413

[10] DEPENDENCE OF APPARENT BARRIER HEIGHT ON BARRIER THICKNESS FOR PERPENDICULAR TRANSPORT IN ALAS/GAAS SINGLE-BARRIER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

KYONO, CS ;

KESAN, VP ;

NEIKIRK, DP ;

MAZIAR, CM ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1989, 54 (06) :549-551

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