ENERGY-BAND PROFILE AND INTERFACE STATES IN SEMICONDUCTOR HETEROJUNCTIONS

被引：3

作者：

KANDILAROV, BD ^{[1
]}

PRIMATAROWA, MT ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1113 SOFIA,BULGARIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 12期

关键词：

D O I：

10.1088/0022-3719/12/12/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The simultaneous appearance of both band-edge discontinuities and interface states in the energy-band profile of semiconductor heterojunction is discussed on the basis of a model that is as simple as possible, consistent with it remaining useful. An attempt is thus made to bridge the gap in the treatment of the two most important features that characterise the energy-band structure of a heterojunction.

引用

页码：L463 / L467

页数：5

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